Additionally, the ALD reactor is capable of direct wafer/sample insertion as well. The buffer chamber provides the ability to transport wafers through the system and surmount the pressure gap between the ALD reactor and the UHV system for subsequent surface characterization or MBE deposition.
The Atomic Layer Deposition module is integrated onto the system through an associated buffer chamber to enable the detailed study of thin films deposited by this technologically important technique (with in-situ XPS for example). Small samples (2.5 cm diameter) can also be separately introduced and characterized in the analytical module under heating and cooling conditions as well as depth profiling utilizing either angle-resolved XPS or Ar-ion depth profiling with in-situ sample rotation for better depth resolution. The Analytical Module is equipped with an array of analytical techniques including monochromatic XPS, UPS, and Scanning Auger Electron Spectroscopy. Each chamber is fully controlled by computer and operates at a base pressure in the 10 -11 mbar range indicating the extreme cleanliness of the systems. Each deposition module has substrate heating and rotational capability for control of film uniformity and growth kinetics in addition to diffraction capabilities for real-time analysis of the growth quality. Wafers are transported throughout the system in a UHV transfer tube. The system utilizes 50 mm diameter wafers (for cleanroom process compatibility), and modified sample plates for the various deposition and characterization techniques. The Hinkle group has established a cluster tool laboratory that enables state-of-the-art in-situ materials growth and characterization capabilities encompassing five separate MBE chambers (chalcogenide growth chamber, oxide growth chamber, nitride growth chamber, arsenide growth chamber, and group IV materials growth chamber), one MOCVD system (currently set up for nitrides), atomic layer deposition (ALD), and integrated analysis tools. Molecular Beam Epitaxy (MBE), Atomic Layer Deposition (ALD), and in-situ X-Ray Photoelectron Spectroscopy Laboratory
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